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BAS70-06W Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAS70-06W Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Mar 26 2 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70W series FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Very small SMD package • Low capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -05W; -06W) are available. The diodes are encapsulated in a SOT323 very small plastic SMD package. PINNING PIN BAS70 W -04W -05W -06W 1a1 a1 a1 k1 2 n.c. k2 a2 k2 3k1 k1, a2 k1, k2 a1, a2 Fig.1 Simplified outline (SOT323) and pin configuration. handbook, 2 columns 3 12 MBC870 Top view Fig.2 BAS70W single diode configuration (symbol). 3 12 n.c. MLC357 Fig.3 BAS70-04W diode configuration (symbol). 3 12 MLC358 Fig.4 BAS70-05W diode configuration (symbol). 3 12 MLC359 Fig.5 BAS70-06W diode configuration (symbol). 3 12 MLC360 MARKING Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. TYPE NUMBER MARKING CODE(1) BAS70W 73 ∗ BAS70-04W 74 ∗ BAS70-05W 75 ∗ BAS70-06W 76 ∗ |
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