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BAS83 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS83 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1998 Jun 24 3 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD80 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 330 mV IF =1mA 410 mV IF =15mA 1V IR reverse current VR =VRmax; see Fig.3 200 nA Cd diode capacitance f = 1 MHz; VR = 2 V; see Fig.4 1.6 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 320 K/W |
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