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BAV70W Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BAV70W
Description  High-speed double diode
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAV70W Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 May 05
3
Philips Semiconductors
Product specification
High-speed double diode
BAV70W
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF =50mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR =25V
30
nA
VR =75V
2.5
µA
VR =25V; Tj = 150 °C60
µA
VR =75V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
300
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W


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