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TISP4350L3BJR-S Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP4350L3BJR-S Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
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3 / 15 page  AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3BJ Overvoltage Protector Series Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD = VDRM TA = 25 °C TA = 85 °C ±5 ±10 µA V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω ‘4070 ‘4350 ±70 ±350 V V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A ‘4070 ‘4350 ±78 ±359 V I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±40 ±250 mA VT On-state voltage IT = ±5A, tW = 100 µs ±3V IH Holding current IT = ±5A, di/dt = -/+ 30 mA/ms ±120 ±350 mA dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs ID Off-state current VD = ±50 V TA = 85 °C ±10 µA Coff Off-state capacitance f= 100 kHz, Vd =1 V rms, VD =0 VD =1 V VD =5 V f= 100 kHz, Vd =1 V rms, VD =0 VD =1 V VD =5 V ‘4070 ‘4350 40 38 31 26 24 20 50 48 39 33 30 25 pF Thermal Characteristics Electrical Characteristics for the R and T Terminals, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit RθJA Junction to free air thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 5) 115 C/W 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 ° ° C 52 NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. |
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