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BDW83D Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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BDW83D Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS 2 PRODU CT INFORMA TION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 5) BDW83 BDW83A BDW83B BDW83C BDW83D 45 60 80 100 120 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 30 V VCE = 40 V VCE = 50 V VCE = 60 V IB =0 IB =0 IB =0 IB =0 IB =0 BDW83 BDW83A BDW83B BDW83C BDW83D 1 1 1 1 1 mA ICBO Collector cut-off current VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D 0.5 0.5 0.5 0.5 0.5 5 5 5 5 5 mA IEBO Emitter cut-off current VEB = 5 V IC =0 2 mA hFE Forward current transfer ratio VCE = 3 V VCE = 3 V IC = 6 A IC =15 A (see Notes 5 and 6) 750 100 20000 VBE(on) Base-emitter voltage VCE = 3 V IC = 6 A (see Notes 5 and 6) 2.5 V VCE(sat) Collector-emitter saturation voltage IB = 12 mA IB = 150 mA IC = 6 A IC =15 A (see Notes 5 and 6) 2.5 4 V VEC Parallel diode forward voltage IE = 15 A IB = 0 3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 0.83 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 10 A VBE(off) = -4.2 V IB(on) = 40 mA RL = 3 Ω IB(off) = -40 mA tp = 20 µs, dc ≤ 2% 0.9 µs toff Turn-off time 7µs |
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