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BDT61C Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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BDT61C Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
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3 / 5 page  BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS 3 P R O D UCT INFORMA TION AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TYPICAL CHARACTERISTICS Figure 1. Figure 2. Figure 3. TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT I C - Collector Current - A 0·5 5·0 1·0 20000 100 1000 10000 TCS110AD T C = -40°C T C = 25°C T C = 100°C V CE = 3 V t p = 300 µs, duty cycle < 2% COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT I C - Collector Current - A 0·5 5·0 1·0 0 0·5 1·0 1·5 2·0 TCS110AB T C = -40°C T C = 25°C T C = 100°C t p = 300 µs, duty cycle < 2% I B = I C / 100 BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT I C - Collector Current - A 0·5 5·0 1·0 0·5 1·0 1·5 2·0 2·5 3·0 TCS110AC T C = -40°C T C = 25°C T C = 100°C I B = I C / 100 t p = 300 µs, duty cycle < 2% |
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