Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

JANUARY 1998 - REVISED FEBRUARY 2005

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)

TISP5xxxH3BJ Overvoltage Protection Series

Rating

Symbol

Value

Unit

Repetitive peak off-state voltage (see Note 1)

'5070H3BJ

'5080H3BJ

'5095H3BJ

'5110H3BJ

'5115H3BJ

'5150H3BJ

'5190H3BJ

-58

-65

-75

-80

-90

-120

-160

V

Non-repetitive peak impulse current (see Notes 2, 3 and 4)

±500

±300

±250

±220

±200

±200

±200

±160

±100

A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)

8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator)

10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)

5/200 µs (VDE 0433, 10/700 µs voltage waveshape)

0.2/310 µs (I3124, 0.5/700 µs waveshape)

5/310 µs (ITU-T K.44, 10/700 µs voltage waveshape used in K.20/21/45)

5/310 µs (FTZ R12, 10/700 µs voltage waveshape)

10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

55

60

2.1

A

20 ms, 50 Hz (full sine wave)

16.7 ms, 60 Hz (full sine wave)

1000 s 50 Hz/60 Hz a.c.

Initial rate of rise of on-state current, GR-1089-CORE 2/10 µs wave shape

±400

A/µs

Junction temperature

-40 to +150

°C

Storage temperature range

-65 to +150

°C

NOTES: 1. See F igure 9 for voltage values at lower temperatures.

3. The surge may be repeated after the device returns to its initial conditions.

4. See F igure 10 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. See Figure 8 for current ratings at other

durations.

Parameter

Test Conditions

Min Typ Max

Unit

Repetitive peak off-state current

-5

-10

µA

Breakover voltage

'5070H3BJ

'5080H3BJ

'5095H3BJ

'5110H3BJ

'5115H3BJ

'5150H3BJ

'5190H3BJ

-70

-80

-95

-110

-115

-150

-190

V

Impulse breakover voltage

dv/dt ≥ -1000 V/µs, Linear voltage ramp,

Maximum ramp value = -500 V

di/dt = -20 A/µs, Linear current ramp,

Maximum ramp value = -10 A

'5070H3BJ

'5080H3BJ

'5095H3BJ

'5110H3BJ

'5115H3BJ

'5150H3BJ

'5190H3BJ

-80

-90

-105

-120

-125

-160

-200

V