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TISP5110H3BJR Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP5110H3BJR Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 11 page Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. JANUARY 1998 - REVISED FEBRUARY 2005 Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) TISP5xxxH3BJ Overvoltage Protection Series Rating Symbol Value Unit Repetitive peak off-state voltage (see Note 1) '5070H3BJ '5080H3BJ '5095H3BJ '5110H3BJ '5115H3BJ '5150H3BJ '5190H3BJ VDRM -58 -65 -75 -80 -90 -120 -160 V Non-repetitive peak impulse current (see Notes 2, 3 and 4) IPPSM ±500 ±300 ±250 ±220 ±200 ±200 ±200 ±160 ±100 A 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator) 10/160 µs (TIA-968-A, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage waveshape) 0.2/310 µs (I3124, 0.5/700 µs waveshape) 5/310 µs (ITU-T K.44, 10/700 µs voltage waveshape used in K.20/21/45) 5/310 µs (FTZ R12, 10/700 µs voltage waveshape) 10/560 µs (TIA-968-A, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) ITSM 55 60 2.1 A 20 ms, 50 Hz (full sine wave) 16.7 ms, 60 Hz (full sine wave) 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, GR-1089-CORE 2/10 µs wave shape diT/dt ±400 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. See F igure 9 for voltage values at lower temperatures. 2. Initially the device must be in thermal equilibrium with TJ = 25 °C. 3. The surge may be repeated after the device returns to its initial conditions. 4. See F igure 10 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. See Figure 8 for current ratings at other durations. Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off-state current VD = VDRM TA = 25 °C TA = 85 °C -5 -10 µA V(BO) Breakover voltage dv/dt = -250 V/ms, RSOURCE = 300 Ω '5070H3BJ '5080H3BJ '5095H3BJ '5110H3BJ '5115H3BJ '5150H3BJ '5190H3BJ -70 -80 -95 -110 -115 -150 -190 V V(BO) Impulse breakover voltage dv/dt ≥ -1000 V/µs, Linear voltage ramp, Maximum ramp value = -500 V di/dt = -20 A/µs, Linear current ramp, Maximum ramp value = -10 A '5070H3BJ '5080H3BJ '5095H3BJ '5110H3BJ '5115H3BJ '5150H3BJ '5190H3BJ -80 -90 -105 -120 -125 -160 -200 V |
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