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TISP8200MDR-S Datasheet(PDF) 7 Page - Bourns Electronic Solutions |
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TISP8200MDR-S Datasheet(HTML) 7 Page - Bourns Electronic Solutions |
7 / 13 page MAY 1998 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP8200M & TISP8201M SLIC Parameter Values The table below shows some details of currently available SLICs using positive and negative supply rails. Manufacturer INFINEON‡ LEGERITY™‡ Unit SLIC SERIES SLIC-S‡ SLIC-E‡ ISLIC™‡ SLIC # PEB4264 PEB 4265 79R251 Data Sheet Issue 14/07/2000 14/07/2000 -/08/2000 Short Circuit Current ±130 ±130 ±150 mA VBATH max. -70 -90 -85 V VBATR max. +50 +90 +85 V VBATR-VBATH max. 90 160 150 V AC Ringing for: 45 85 65 V rms VBATH -54 -70 -68 V VBATR +36 +80 +52 V VBATR-VBATH 90 150 120 V R or T Power Max. < 10 ms TBA 10 W R or T Overshoot < 10 ms -5 5 V R or T Overshoot < 1 ms -10 +10 -10 +10 V R or T Overshoot < 10 µs-10 +30 -10 +30 V R or T Overshoot < 1 µs-10 10 V R or T Overshoot < 250 ns -15 15 V Line Feed Resistance 20 + 30 20 + 30 50 Ω ‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD’s Communication Products Division). Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies. The maximum total voltage, VBATR - VBATH, is normally about 10 % less than the sum of the maximum VBATR and maximum VBATH values. In terms of voltage overshoot, ±10 V is needed for 1 µs and ±15 V for 250 ns. It is important to define the protector overshoot under actual circuit conditions. For example, if the series line feed resistor was 20 Ω, R1 in Figure 10, and Telcordia GR-1089-CORE 2/10 and 10/1000 first level impulses were applied, the peak protector currents would be 100 A and 33 A. Therefore, the protector voltage overshoot should be measured at 100 A, 2/10 and 33 A, 10/1000. Using the table values for maximum battery voltage and minimum overshoot gives a requirement of ±105 V from the output to ground and ±175 V between outputs. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover down to -40 °C, the 25 °C protector minimum values become ±120 V referenced to ground, ±190 V between outputs and 100 V or -100 V on the gate. Operation of Gated Protectors Figure 5 shows how the TISP8200M and TISP8201M limit overvoltages. The TISP8200M SCR sections limit negative overvoltages and the TISP8201M SCR sections limit positive overvoltages. The TISP8200M (buffered) gate is connected to the negative SLIC battery feed voltage (VBATH) to provide the protection reference voltage. Negative overvoltages are initially clipped close to the SLIC negative supply rail value (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions. If sufficient current is available from the overvoltage, then the SCR will crowbar into a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the SCR prevents d.c. latchup with the SLIC output current. |
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