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TISP8201MDR-S Datasheet(PDF) 7 Page - Bourns Electronic Solutions

Part # TISP8201MDR-S
Description  COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
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Manufacturer  BOURNS [Bourns Electronic Solutions]
Direct Link  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

TISP8201MDR-S Datasheet(HTML) 7 Page - Bourns Electronic Solutions

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MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
SLIC Parameter Values
The table below shows some details of currently available SLICs using positive and negative supply rails.
Manufacturer
INFINEON‡
LEGERITY™‡
Unit
SLIC SERIES
SLIC-S‡
SLIC-E‡
ISLIC™‡
SLIC #
PEB4264
PEB 4265
79R251
Data Sheet Issue
14/07/2000
14/07/2000
-/08/2000
Short Circuit Current
±130
±130
±150
mA
VBATH max.
-70
-90
-85
V
VBATR max.
+50
+90
+85
V
VBATR-VBATH max.
90
160
150
V
AC Ringing for:
45
85
65
V rms
VBATH
-54
-70
-68
V
VBATR
+36
+80
+52
V
VBATR-VBATH
90
150
120
V
R or T Power Max. < 10 ms
TBA
10
W
R or T Overshoot < 10 ms
-5
5
V
R or T Overshoot < 1 ms
-10
+10
-10
+10
V
R or T Overshoot < 10 µs-10
+30
-10
+30
V
R or T Overshoot < 1 µs-10
10
V
R or T Overshoot < 250 ns
-15
15
V
Line Feed Resistance
20 + 30
20 + 30
50
‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD’s Communication Products Division).
Other product names used in this publication are for identification purposes only and may be trademarks of their respective
companies.
The maximum total voltage, VBATR - VBATH, is normally about 10 % less than the sum of the maximum VBATR and maximum VBATH values.
In terms of voltage overshoot, ±10 V is needed for 1 µs and ±15 V for 250 ns. It is important to define the protector overshoot under actual
circuit conditions. For example, if the series line feed resistor was 20 Ω, R1 in Figure 10, and Telcordia GR-1089-CORE 2/10 and 10/1000 first
level impulses were applied, the peak protector currents would be 100 A and 33 A. Therefore, the protector voltage overshoot should be
measured at 100 A, 2/10 and 33 A, 10/1000.
Using the table values for maximum battery voltage and minimum overshoot gives a requirement of ±105 V from the output to ground and
±175 V between outputs. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover
down to -40 °C, the 25 °C protector minimum values become ±120 V referenced to ground, ±190 V between outputs and 100 V or -100 V on
the gate.
Operation of Gated Protectors
Figure 5 shows how the TISP8200M and TISP8201M limit overvoltages. The TISP8200M SCR sections limit negative overvoltages and the
TISP8201M SCR sections limit positive overvoltages.
The TISP8200M (buffered) gate is connected to the negative SLIC battery feed voltage (VBATH) to provide the protection reference voltage.
Negative overvoltages are initially clipped close to the SLIC negative supply rail value (VBATH) by the conduction of the TISP8200M transistor
base-emitter and the SCR gate-cathode junctions. If sufficient current is available from the overvoltage, then the SCR will crowbar into a low
voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the SCR prevents d.c. latchup with the
SLIC output current.


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