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TISPPBL3 Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISPPBL3 Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 14 page OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Rating Symbol Value Unit Repetitive peak off-state voltage, VGK =0, -40 °C ≤ TJ ≤ 85 °CVDRM -170 V Repetitive peak gate-cathode voltage, VKA =0, - 40 °C ≤ TJ ≤ 85 °CVGKRM -160 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) ITSP A 10/1000 µs(Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999) 30 5/310 µs (IT U-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 µs) 40 2/10 µs(Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999) 100 Non-repetitive peak on-state current, 50/60 Hz, TA =25 °C (see Notes 2 and 3) ITSM A 100 ms 10 1s 5s 300 s 900 s 4.4 2.1 0.64 0.60 Non-repetitive peak gate current, 1/2 µspulse, cathodes commoned (see Note 1) IGSM 40 A Operating free-air temperature range TA -40 to +85 °C Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns to its initial conditions. Above 85 °C, derate linearly to zero at 150 °C lead temperature. 2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). 3. Values for VGG = -120 V. For values at other voltages see Figure 4. Above 25 °C, derate linearly to zero at 150 °C lead temperature. The TISPPBL3 is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect the Ericsson Microelectronics SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISPPBL3 limits voltages that exceed the referenced SLIC supply rail levels. The SLIC line driver section is typically powered by a negative voltage, VBat, in the region of -10 V to -90 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage, the overvoltage stress on the SLIC is minimized. The TISPPBL3 buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the crowbar prevents d.c. latchup. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The TISPPBL3 has an 8-pin plastic small-outline surface mount package, D suffix, and is a universal substitute for TISPPBL1D and TISPPBL2D devices. Recommended Operating Conditions Absolute Maximum Ratings, -40 °C ≤ TA ≤ 85 °C (Unless Otherwise Noted) TISPPBL3 Programmable Protector Description See Figure 10 Min Typ Max Unit C1 Gate decoupling capacitor 100 220 nF RSA RSB Series resistance for GR-1089-CORE first-level and second-level surge survival Series resistance for GR-1089-CORE first-level surge survival Series resistance for ITU-T recommendation K.20, K.21 and K.45 for coordination with a 400 V primary protector 40 25 10 Ω |
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