OCTOBER 2000 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Rating

Symbol

Value

Unit

-170

V

-160

V

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

A

10/1000 µs(Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999)

30

5/310 µs (IT U-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 µs)

40

2/10 µs(Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999)

100

A

100 ms

10

1s

5s

300 s

900 s

4.4

2.1

0.64

0.60

Non-repetitive peak gate current, 1/2 µspulse, cathodes commoned (see Note 1)

40

A

Operating free-air temperature range

-40 to +85

°C

Junction temperature

-40 to +150

°C

Storage temperature range

-65 to +150

°C

to its initial conditions. Above 85 °C, derate linearly to zero at 150 °C lead temperature.

2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring

to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied

simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair).

temperature.

The TISPPBL3 is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect the Ericsson Microelectronics

SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction.

The TISPPBL3 limits voltages that exceed the referenced SLIC supply rail levels.

The SLIC line driver section is typically powered by a negative voltage, VBat, in the region of -10 V to -90 V. The protector gate is connected to

this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the

negative supply voltage, the overvoltage stress on the SLIC is minimized. The TISPPBL3 buffered gate design reduces the loading on the SLIC

supply during overvoltages caused by power cross and induction.

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative

supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage ground referenced

on-state condition. As the overvoltage subsides, the high holding current of the crowbar prevents d.c. latchup.

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system

operation they are virtually transparent. The TISPPBL3 has an 8-pin plastic small-outline surface mount package, D suffix, and is a universal

substitute for TISPPBL1D and TISPPBL2D devices.

Recommended Operating Conditions

Absolute Maximum Ratings, -40 °C ≤ TA ≤ 85 °C (Unless Otherwise Noted)

TISPPBL3 Programmable Protector

Description

See Figure 10

Min

Typ

Max

Unit

C1

Gate decoupling capacitor

100

220

nF

RSA

RSB

Series resistance for GR-1089-CORE first-level and second-level surge survival

Series resistance for GR-1089-CORE first-level surge survival

Series resistance for ITU-T recommendation K.20, K.21 and K.45 for coordination with a

400 V primary protector

40

25

10

Ω