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BC140-16 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BC140-16 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 May 12 4 Philips Semiconductors Product specification NPN medium power transistors BC140; BC141 CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =60V − 10 100 nA IE = 0; VCB =60V; Tj = 150 °C − 10 100 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC = 100 µA; VCE =1V BC140-10; BC141-10 − 40 − BC140-16; BC141-16 − 90 − hFE DC current gain IC = 100 mA; VCE =1V BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 hFE DC current gain IC = 1 A; VCE =1V BC140-10; BC141-10 − 20 − BC140-16; BC141-16 − 30 − VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA − 0.6 1 V VBE base-emitter voltage IC = 1 A; VCE =1V − 1.2 1.8 V Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz −− 25 pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz −− 80 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 −− MHz Switching times (between 10% and 90% levels) ton turn-on time ICon = 100 mA; IBon = 5 mA; IBoff = −5mA −− 250 ns toff turn-off time −− 850 ns |
Similar Part No. - BC140-16 |
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Similar Description - BC140-16 |
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