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BC177B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BC177B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Jun 04 3 Philips Semiconductors Product specification PNP general purpose transistor BC177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−45 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 0.5 K/mW Rth j-c thermal resistance from junction to case 0.2 K/mW |
Similar Part No. - BC177B |
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Similar Description - BC177B |
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