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BC817W Datasheet(PDF) 3 Page - NXP Semiconductors |
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BC817W Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistor BC817W THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =20V − 100 nA IE = 0; VCB = 20 V; Tj = 150 °C − 5 µA IEBO emitter cut-off current IC = 0; VEB =5V − 100 nA hFE DC current gain IC = 100 mA; VCE = 1 V; note 1; see Figs 2, 3 and 4 BC817W 100 600 BC817-16W 100 250 BC817-25W 160 400 BC817-40W 250 600 DC current gain IC = 500 mA; VCE = 1 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − 700 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; note 1 − 1.2 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 5pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − MHz |
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