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BC847C Datasheet(PDF) 5 Page - NXP Semiconductors |
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BC847C Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 10 page 2004 Feb 06 5 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage MGT723 10−1 110 102 103 IC (mA) 0 400 300 200 100 hFE (1) (2) (3) Fig.2 DC current gain as a function of collector current; typical values. BC846A; VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage MGT724 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBE (mV) (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector current; typical values. BC846A; VCE =5V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. handbook, halfpage 103 102 10 MGT725 10−1 110 102 103 IC (mA) VCEsat (mV) (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. BC846A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage MGT726 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. BC846A; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. |
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