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BC856AT Datasheet(PDF) 2 Page - NXP Semiconductors |
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BC856AT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 26 2 Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 plastic package. NPN complements: BC846T and BC847T. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BC856AT 3A BC857BT 3F BC856BT 3B BC857CT 3G BC857AT 3E PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SC-75) and symbol. handbook, halfpage MAM362 1 2 3 Top view 12 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC856AT; BC856BT −−80 V BC857AT; BC857BT; BC857CT −−50 V VCEO collector-emitter voltage open base BC856AT; BC856BT −−65 V BC857AT; BC857BT; BC857CT −−45 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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