1999 May 28

2

Philips Semiconductors

Product specification

PNP general purpose transistors

BC859; BC860

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• Low noise input stages of audio frequency equipment.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complements: BC849 and BC850.

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE

NUMBER

MARKING

TYPE

NUMBER

MARKING

BC859B

4B

∗

BC860B

4F

∗

BC859C

4C

∗

BC860C

4G

∗

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC859

−−30

V

BC860

−−50

V

collector-emitter voltage

open base

BC859

−−30

V

BC860

−−45

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C