R1LV0416CBG-5SI datasheet(4/16 Pages) RENESAS

Part #	R1LV0416CBG-5SI

Description	Wide Temperature Range Version 4M SRAM (256-kword 횞 16-bit)

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 16 page

R1LV0416CBG-I Series

Rev.0.01, Jan.11.2005, page 4 of 14

Operation Table

CS1#

CS2

WE#

OE#

UB#

LB#

I/O0 to I/O7

I/O8 to I/O15

Operation

H

×

High-Z

Standby

×

L

×

High-Z

Standby

×

H

High-Z

Standby

L

H

L

Dout

Read

L

H

L

H

L

Dout

High-Z

Lower byte read

L

H

L

H

High-Z

Dout

Upper byte read

L

H

L

×

L

Din

Write

L

H

L

×

H

L

Din

High-Z

Lower byte write

L

H

L

×

L

H

High-Z

Din

Upper byte write

L

H

×

High-Z

Output disable

Note:

H: VIH, L: VIL,

×: VIH or VIL

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Power supply voltage relative to VSS

VCC

−0.5 to +4.6

V

Terminal voltage on any pin relative to VSS

VT

−0.5*

1 to V

CC + 0.3*

2

V

Power dissipation

PT

0.7

W

Operating temperature

Topr

−40 to +85

°C

Storage temperature range

Tstg

−65 to +150

°C

Storage temperature range under bias

Tbias

−40 to +85

°C

Notes: 1. VT min:

−3.0 V for pulse half-width ≤ 30 ns.

2. Maximum voltage is +4.6 V.

DC Operating Conditions

(Ta =

−40 to +85°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

VCC

2.2

2.5/3.0

3.6

V

VSS

0

V

Input high voltage

VCC = 2.2 V to 2.7 V

VIH

2.0



VCC + 0.3

V

VCC = 2.7 V to 3.6 V

VIH

2.2



VCC + 0.3

V

Input low voltage

VCC = 2.2 V to 2.7 V

VIL

−0.2



0.4

V

1

VCC = 2.7 V to 3.6 V

VIL

−0.3



0.6

V

1

Note:

1. VIL min:

−3.0 V for pulse half-width ≤ 30 ns.

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