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BCX70J Datasheet(PDF) 3 Page - NXP Semiconductors |
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BCX70J Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistors BCX70 series CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =45V −− 20 nA IE = 0; VCB = 45 V; Tamb = 150 °C −− 20 µA IEBO emitter cut-off current IC = 0; VEB =4V −− 20 nA hFE DC current gain IC =10 µA; VCE =5V BCX70G −−− BCX70H 40 −− BCX70J 30 −− BCX70K 100 −− DC current gain IC = 2 mA; VCE =5V BCX70G 120 − 220 BCX70H 180 − 310 BCX70J 250 − 460 BCX70K 380 − 630 DC current gain IC = 50 mA; VCE =1V BCX70G 50 −− BCX70H 70 −− BCX70J 90 −− BCX70K 100 −− VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA 50 − 350 mV IC = 50 mA; IB = 1.25 mA 100 − 550 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.25 mA 600 − 850 mV IC = 50 mA; IB = 1.25 mA 700 − 1050 mV VBE base-emitter voltage IC =10 µA; VCE =5V − 520 − mV IC = 2 mA; VCE = 5 V 550 650 750 mV IC = 50 mA; VCE =1V − 780 − mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 1.7 − pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz; note 1 100 250 − MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz − 26dB |
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