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BD329 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BD329 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page  1997 Mar 07 2 Philips Semiconductors Product specification NPN power transistor BD329 FEATURES • High current (max. 3 A) • Low voltage (max. 20 V). APPLICATIONS • Especially for battery equipped applications. DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD330. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage MAM254 12 3 Top view 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 32 V VCEO collector-emitter voltage open base −− 20 V ICM peak collector current −− 3A Ptot total power dissipation Tmb ≤ 45 °C −− 15 W hFE DC current gain IC = 0.5 A; VCE =1V 85 − 375 fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz − 130 − MHz |
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