1998 May 29

3

Philips Semiconductors

Product specification

NPN power transistors

BD825; BD829

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BD825

−

45

V

BD829

−

100

V

collector-emitter voltage

open base

BD825

−

45

V

BD829

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

1.5

A

peak base current

−

500

mA

total power dissipation

−

2W

−

8W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

62.5

K/W

thermal resistance from junction to mounting base

12.5

K/W