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BF245A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF245A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page 1996 Jul 30 6 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C handbook, halfpage VDS (V) ID (mA) 30 0 020 10 MBH554 20 10 VGS = 0 V −1 V −2 V −3 V −4 V Fig.8 Output characteristics for BF245C; typical values. VDS = 15 V; Tj =25 °C. Fig.9 Drain current as a function of junction temperature; typical values for BF245A. VDS =15V. handbook, halfpage 0 0 50 150 Tj (°C) 4 ID (mA) 3 1 2 MGE775 100 −0.5 V VGS = 0 V −1.5 V −1 V Fig.10 Drain current as a function of junction temperature; typical values for BF245B. handbook, halfpage 0 0 50 150 15 5 10 MGE776 100 Tj (°C) ID (mA) VGS = 0 V −2 V −1 V VDS =15V. Fig.11 Drain current as a function of junction temperature; typical values for BF245C. VDS =15V. handbook, halfpage 0 50 150 20 0 MGE779 100 4 8 12 16 Tj (°C) ID (mA) VGS = 0 V −4 V −2 V |
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