1997 Jul 08

3

Philips Semiconductors

Product specification

NPN medium frequency transistors

BF494; BF495

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

30

V

collector-emitter voltage

open base

−

20

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

30

mA

peak collector current

−

30

mA

total power dissipation

−

300

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

420

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

−

100

nA

−

4

µA

emitter cut-off current

−

100

nA

DC current gain

BF494

67

220

BF494B

100

220

BF495

35

125

BF495B

100

125

base-emitter voltage

650

740

mV

feedback capacitance

−

1pF

transition frequency

120

−

MHz