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BLC6G20LS-140 Datasheet(PDF) 3 Page - Analog Devices |
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BLC6G20LS-140 Datasheet(HTML) 3 Page - Analog Devices |
3 / 9 page BLC6G20-140_6G20LS-140_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 30 January 2006 3 of 9 Philips Semiconductors BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Ruggedness in class-AB operation The BLC6G20-140 and BLC6G20LS-140 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1000 mA; PL = 140 W (CW); f = 1990 MHz. Table 5: Thermal characteristics Symbol Parameter Conditions Type Min Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase =80 °C; PL = 35.5 W BLC6G20-140 <tbd> <tbd> <tbd> K/W BLC6G20LS-140 <tbd> 0.43 0.52 K/W Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS =10V;ID = 216 mA <tbd> 2 <tbd> V VGSq gate-source quiescent voltage VDS =28V;ID = 950 mA <tbd> <tbd> <tbd> V IDSS drain leakage current VGS =0V; VDS =28V - - 5 µA IDSX drain cut-off current VGS =VGS(th) + 3.75 V; VDS =10V 32 39 - A IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS =10V; ID = 10.8 A - 13.5 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID = 7.56 A - 0.07 - Ω Crs feedback capacitance VGS =0V; VDS =28V; f= 1MHz - <tbd> -pF Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 1932.5 MHz; f2 = 1942.5 MHz; f3 = 1977.5 MHz; f4 = 1987.5 MHz; RF performance at VDS = 28 V; IDq = 1000 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 35.5 - W Gp power gain PL(AV) = 35.5 W <tbd> 16.5 - dB IRL input return loss PL(AV) = 35.5 W - <tbd> <tbd> dB ηD drain efficiency PL(AV) = 35.5 W <tbd> 31 - % IMD3 third order intermodulation distortion PL(AV) = 35.5 W - −37 <tbd> dBc ACPR adjacent channel power ratio PL(AV) = 35.5 W - −40 <tbd> dBc |
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