BLC6G20LS-140 datasheet(3/9 Pages) AD

Part #	BLC6G20LS-140

Description	UHF power LDMOS transistor

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BLC6G20-140_6G20LS-140_1

Objective data sheet

Rev. 01 — 30 January 2006

3 of 9

Philips Semiconductors

BLC6G20-140; BLC6G20LS-140

UHF power LDMOS transistor

5.

Thermal characteristics

6.

Characteristics

7.

Application information

7.1 Ruggedness in class-AB operation

The BLC6G20-140 and BLC6G20LS-140 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS = 28 V; IDq = 1000 mA; PL = 140 W (CW); f = 1990 MHz.

Table 5:

Thermal characteristics

Symbol

Parameter

Conditions

Type

Min

Typ

Max

Unit

Rth(j-case) thermal resistance

from junction to case

Tcase =80 °C;

PL = 35.5 W

BLC6G20-140

<tbd> <tbd> <tbd> K/W

BLC6G20LS-140

<tbd> 0.43

0.52

K/W

Table 6:

Characteristics

Tj = 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID = 0.5 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS =10V;ID = 216 mA

<tbd> 2

<tbd> V

VGSq

gate-source quiescent voltage

VDS =28V;ID = 950 mA

<tbd> <tbd> <tbd> V

IDSS

drain leakage current

VGS =0V; VDS =28V

-

5

µA

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

32

39

-

A

IGSS

gate leakage current

VGS = 13 V; VDS = 0 V

-

450

nA

gfs

forward transconductance

VDS =10V; ID = 10.8 A

-

13.5

-

S

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID = 7.56 A

-

0.07

-

Ω

Crs

feedback capacitance

VGS =0V; VDS =28V;

f= 1MHz

-

<tbd> -pF

Table 7:

Application information

Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test

model 1; 1-64 PDPCH; f1 = 1932.5 MHz; f2 = 1942.5 MHz; f3 = 1977.5 MHz; f4 = 1987.5 MHz;

RF performance at VDS = 28 V; IDq = 1000 mA; Tcase = 25 °C; unless otherwise speciﬁed; in a

class-AB production test circuit

Symbol Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

-

35.5

-

W

Gp

power gain

PL(AV) = 35.5 W

<tbd> 16.5

-

dB

IRL

input return loss

PL(AV) = 35.5 W

-

<tbd> <tbd> dB

ηD

drain efﬁciency

PL(AV) = 35.5 W

<tbd> 31

-

%

IMD3

third order intermodulation distortion

PL(AV) = 35.5 W

-

−37

<tbd> dBc

ACPR

adjacent channel power ratio

PL(AV) = 35.5 W

-

−40

<tbd> dBc

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