IRHNJ597230

Pre-Irradiation

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.24

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.505

Ω

VGS = -12V, ID = -5.0A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

5.4

—

—

S ( )VDS > -15V, IDS = -5.0A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

-10

VDS= -160V ,VGS=0V

—

—

-25

VDS = -160V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 20V

Qg

Total Gate Charge

—

—

40

VGS =-12V, ID = -8.0A

Qgs

Gate-to-Source Charge

—

—

12

nC

VDS = -100V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

15

Turn-On Delay Time

—

—

25

VDD = -100V, ID = -8.0A,

tr

Rise Time

—

—

30

VGS =-12V, RG = 7.5Ω,

Turn-Off Delay Time

—

—

50

tf

Fall Time

—

—

105

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

1344

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

192

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

19

—

nA

➃

nH

ns

µA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

1.67

RthJ-PCB

Junction-to-PC board

—

6.9

—

soldered to a 2” square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-8.0

ISM

Pulse Source Current (Body Diode) ➀

—

—

-32

VSD

Diode Forward Voltage

—

—

-5.5

V

trr

Reverse Recovery Time

—

—

180

ns

Tj = 25°C, IF =-8.0A, di/dt ≤ -100A/µs

QRR Reverse Recovery Charge

—

—

1.5

µCVDD ≤ -50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A