 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BF998WR Datasheet(PDF) 7 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
BF998WR Datasheet(HTML) 7 Page - NXP Semiconductors |
|
|
7 / 12 page  1997 Sep 05 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR Fig.11 Input admittance as a function of the frequency; typical values. VDS = 8 V; VG2-S =4V. ID = 10 mA; Tamb =25 °C. 10 3 MGC466 102 10 10 2 1 10 10 1 y is (mS) f (MHz) b is g is VDS = 8 V; VG2-S =4V. ID = 10 mA; Tamb =25 °C. Fig.12 Reverse transfer admittance and phase as a function of frequency; typical values. 10 3 MGC467 102 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 ( µS) f (MHz) rs yrs (deg) rs ϕ ϕ Fig.13 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 8 V; VG2-S =4V. ID = 10 mA; Tamb =25 °C. 10 3 MGC468 102 10 1 10 2 10 1 10 10 2 y fs (mS) y fs f (MHz) (deg) fs fs ϕ ϕ Fig.14 Output admittance as a function of the frequency; typical values. VDS = 8 V; VG2-S =4V. ID = 10 mA; Tamb =25 °C. 10 3 MGC469 102 10 10 1 10 1 10 2 yos (mS) f (MHz) bos gos |
Similar Part No. - BF998WR |
|
Similar Description - BF998WR |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
