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IDT70T15A999PF Datasheet(PDF) 8 Page - Integrated Device Technology |
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IDT70T15A999PF Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 18 page  6.42 IDT70T16/5L High-Speed 2.5V 16/8K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 PRELIMINARY AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Sym bol Param eter 70T16/5L20 Com 'l Only 70T16/5L25 Com 'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cy cle Tim e 20 __ __ 25 __ __ ns tEW Chip Enab le to End-of-W rite (3) 15 __ __ 20 __ __ ns tAW A ddress Valid to E nd-of-W rite 15 __ __ 20 __ __ ns tAS A ddress Se t-up Tim e (3) 0 __ __ 0 __ __ ns tWP W rite P ulse W id th 15 __ __ 20 __ __ ns tWR Write Re co v e ry Time 0 __ __ 0 __ __ ns tDW Data Valid to E nd -o f-W rite 15 __ __ 15 __ __ ns tHZ Outp ut Hig h-Z Tim e (1,2) __ __ 12 __ __ 15 ns tDH Data Ho ld Tim e (4) 0 __ __ 0 __ __ ns tWZ W rite E na b le to Outp ut in Hig h-Z(1,2) __ __ 12 __ __ 15 ns tOW O utp ut A ctive fro m E nd -o f-W rite (1,2,4) 0 __ __ 0 __ __ ns tSW R D SEM Flag Write to Re ad Tim e 5 __ __ 5 __ __ ns tSP S SEM Flag Contention Wind ow 5 __ __ 5 __ __ ns 5663 tb l 1 2 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 1). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. |
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