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BFG25AW Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFG25AW Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page 1998 Sep 23 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X f = 500 MHz; VCE =1V. Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 0 30 20 10 0 1 2 MLB973 3 gain (dB) I (mA) C G UM MSG f = 1 GHz; VCE =1V. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 0 30 20 10 0 1 2 MLB974 3 gain (dB) I (mA) C MSG G UM IC = 0.5 mA; VCE =1V. Fig.8 Gain as a function of frequency; typical values. handbook, halfpage 50 0 10 MLB975 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM MSG Fig.9 Gain as a function of frequency; typical values. IC = 1 mA; VCE =1V. handbook, halfpage 50 0 10 MLB976 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM MSG |
Similar Part No. - BFG25AW |
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Similar Description - BFG25AW |
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