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BFG35 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BFG35 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 1999 Aug 24 8 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 Fig.12 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb =25 °C. handbook, halfpage MBB384 20 120 45 70 65 60 55 50 40 60 80 100 I (mA) C d (dB) 2 |
Similar Part No. - BFG35 |
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Similar Description - BFG35 |
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