BQ24070 datasheet(5/26 Pages) TI

Part #	BQ24070

Description	SINGLE-CHIP LI-ION CHARGE AND SYSTEM POWER-PATH MANAGEMENT IC

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bq24070

bq24071

SLUS694B – MARCH 2006 – REVISED AUGUST 2006

ELECTRICAL CHARACTERISTICS (continued)

over junction temperature range (0°C

≤ T

J ≤ 125°C) and the recommended supply voltage range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Voltage on ISET1, VVCC≥ 4.35 V,

Battery charge current set

V(SET)

VI(OUT)- VI(BAT) > V(DO-MAX),

2.47

2.50

2.53

V

voltage(5)

VI(BAT) > V(LOWV)

100 mA

≤ I

O(BAT) ≤ 1.5 A

375

425

450

K(SET)

Charge current set factor, BAT

10 mA

≤ I

O(BAT) ≤ 100 mA

(6)

300

450

600

USB MODE INPUT CURRENT LIMIT

ISET2 = Low

80

90

100

I(USB)

USB input port current range

mA

ISET2 = High

400

500

BAT PIN CHARGING VOLTAGE REGULATION, VO (BAT-REG) + V (DO-MAX) < VCC, ITERM < IBAT(OUT) ≤ 1 A

Battery charge voltage

4.2

V

VO(BAT-REG)

TA = 25°C

–0.5%

0.5%

Battery charge voltage regulation

accuracy

–1%

1%

CHARGE TERMINATION DETECTION

Charge termination detection

VI(BAT) > V(RCH),

I(TERM)

10

150

mA

range

I(TERM) = (K(SET) × V(TERM))/ RSET

VI(BAT) > V(RCH) , Mode = High

230

250

270

Charge termination set voltage,

V(TERM)

mV

measured on ISET1

VI(BAT) > V(RCH) , Mode = Low

95

100

130

tFALL = 100 ns, 10 mV overdrive,

Deglitch time for termination

TDGL(TERM)

ICHG increasing above or decreasing

22.5

ms

detection

below threshold

TEMPERATURE SENSE COMPARATORS

VLTF

High voltage threshold

Temp fault at V(TS) > VLTF

2.465

2.500

2.535

V

VHTF

Low voltage threshold

Temp fault at V(TS) < VHTF

0.485

0.500

0.515

V

Temperature sense current

ITS

94

100

106

µA

source

R(TMR) = 50 kΩ, VI(BAT) increasing or

Deglitch time for temperature

TDGL(TF)

decreasing above and below;

22.5

ms

fault detection(7)

100-ns fall time, 10-mv overdrive

BATTERY RECHARGE THRESHOLD

VO(BAT-REG)

VRCH

Recharge threshold voltage

V

–0.075

–0.100

–0.125

R(TMR) = 50 kΩ, VI(BAT) increasing

Deglitch time for recharge

TDGL(RCH)

or decreasing below threshold,

22.5

ms

detection(7)

100-ns fall time, 10-mv overdrive

STAT1, STAT2, AND PG, OPEN DRAIN (OD) OUTPUTS(8)

Low-level output saturation

IOL = 5 mA, An external pullup

VOL

0.25

V

voltage

resistor

≥ 1 K required.

ILKG

Input leakage current

1

5

µA

ISET2, CE INPUTS

VIL

Low-level input voltage

0

0.4

V

VIH

High-level input voltage

1.4

IIL

Low-level input current, CE

–1

IIH

High-level input current, CE

1

µA

IIL

Low-level input current, ISET2

VISET2 = 0.4 V

–20

IIH

High-level input current, ISET2

VISET2 = VCC

40

t(CE-HLDOFF)

Holdoff time, CE

CE going low only

4

6

ms

MODE INPUT

Falling Hi

→Low; 280 K ± 10% applied

VIL

Low-level input voltage

0.975

1

1.025

V

when low.

VIH

High-level input voltage

Input RMode sets external hysteresis

VIL + .01

VIL + .024

V

(5)

For half-charge rate, V(SET) is 1.25 V ± 25 mV.

(6)

Specification is for monitoring charge current via the ISET1 pin during voltage regulation mode, not for a reduced fast-charge level.

(7)

All deglitch periods are a function of the timer setting and is modified in DPPM or thermal regulation modes by the percentages that the

program current is reduced.

(8)

See Charger Sleep mode for PG (VCC = VIN) specifications.

5

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