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MRFG35010AR1 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

Part # MRFG35010AR1
Description  Gallium Arsenide PHEMT RF Power Field Effect Transistor
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRFG35010AR1 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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MRFG35010AR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (dBm)
Figure 3. Single-Carrier W-CDMA Power Gain
and Drain Efficiency versus Output Power
40
2
14
10
0
60
10
8
40
6
30
4
20
15
10
20
25
30
35
GT
40
−60
−10
15
−25
0
IRL
ACPR
Pout, OUTPUT POWER (dBm)
Figure 4. Single-Carrier W-CDMA ACPR and
Input Return Loss versus Output Power
−5
−20
−30
−40
−15
20
−10
25
30
35
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
ΓS = 0.850 ∠ −138.7_, ΓL = 0.827 ∠ −157.6_
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
ηD
−50
−20
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
ΓS = 0.850 ∠ −138.7_
ΓL = 0.827 ∠ −157.6_
12
50


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