55410 datasheet(6/13 Pages) CEL

Part #	55410

Description	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

Download	13 Pages

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Manufacturer	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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6 / 13 page

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.ncsd.necel.com/

Data Sheet PU10542EJ02V0DS

6

NE55410GR

Similar Part No. - 55410

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
Renesas Technology Corp	NE55410GR	317Kb / 15P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
Renesas Technology Corp	NES1823S-45	239Kb / 10P	GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET 2004
Renesas Technology Corp	NES1823S-90	242Kb / 10P	GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET 2004
NEC	NE6501077	37Kb / 6P	10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Sanyo Semicon Device	LA4278	74Kb / 6P	10 W 2-Channel Power Amplifier
NEC	NE6500496	37Kb / 6P	4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS