S852TF

Document Number 85104

Rev. 1.3, 02-May-05

Vishay Semiconductors

www.vishay.com

1

2

1

3

Electrostatic sensitive device.

Observe precautions for handling.

16867

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages.

In addition to space savings, the SOT-490 provides a

higher level of reliability than other 3-pin packages,

such as more resistance to moisture.

Due to the short length of its leads the SOT-490 is

also reducing package inductances resulting in some

better electrical performance. All of these aspects

make this device an ideal choice for demanding RF

applications.

Features

• Low supply voltage

• Low current consumption

• Low noise figure

•50

Ω input impedance at 945 MHz

• High power gain

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.2 mA to 5 mA.

Mechanical Data

Typ: S852TF

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Absolute Maximum Ratings

Part

Marking

Package

S852TF

52

SOT-490

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

12

V

Collector-emitter voltage

6V

Emitter-base voltage

2V

Collector current

8mA

Total power dissipation

30

mW

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

°C

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