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S852TF Datasheet(PDF) 1 Page - Vishay Siliconix |
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S852TF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page S852TF Document Number 85104 Rev. 1.3, 02-May-05 Vishay Semiconductors www.vishay.com 1 2 1 3 Electrostatic sensitive device. Observe precautions for handling. 16867 Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broad- band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical per- formance and reliability are taken to a new level cov- ering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications. Features • Low supply voltage • Low current consumption • Low noise figure •50 Ω input impedance at 945 MHz • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Mechanical Data Typ: S852TF Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Marking Package S852TF 52 SOT-490 Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6V Emitter-base voltage VEBO 2V Collector current IC 8mA Total power dissipation Tamb ≤ 125 °C Ptot 30 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C e3 |
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