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UTRON
UT62L25616(I)
Rev. 1.1
256K X 16 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80054
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
7
DATA RETENTION CHARACTERISTICS (TA = -40℃ to 85℃(I))
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Vcc for Data Retention
VDR
CE ≧ VCC-0.2V
1.5
-
3.6
V
Data Retention Current
IDR
Vcc=1.5V
- L
-
1
50
µA
CE ≧ VCC-0.2V
- LL
-
0.5
20
µA
Chip Disable to Data
tCDR
See Data Retention
0
-
-
ms
Retention Time
Waveforms (below)
Recovery Time
tR
5
-
-
ms
DATA RETENTION WAVEFORM
tCDR
tR
2.7V
VCC
CE
VSS
Data Retention Mode
VDR ≧ 1.5V
CE ≧ VCC -0.2V
2.7V