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BFQ34 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BFQ34 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 10 page  September 1995 6 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 Fig.6 Gain as a function of frequency. Ic = 120 mA; VCE = 15 V; Tamb =25 °C. handbook, halfpage MEA319 40 0 20 30 10 –1 110 10 f (GHz) gain (dB) G UM Is I 12 2 Fig.7 Intermodulation distortion as a function of collector current. Vo = 1.2 V; VCE = 15 V; f(p+q−r) = 793.25 MHz handbook, halfpage 50 150 20 70 60 MEA321 50 40 30 100 d im (dB) I (mA) C |
Similar Part No. - BFQ34 |
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Similar Description - BFQ34 |
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