2

RF Device Data

Freescale Semiconductor

MRF7S21170HR3 MRF7S21170HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

500

nAdc

On Characteristics

Gate Threshold Voltage

1

2

3

Vdc

2

2.8

4

Vdc

Drain-Source On-Voltage

0.1

0.15

0.3

Vdc

Reverse Transfer Capacitance

—

0.9

—

pF

Output Capacitance

—

703

—

pF

f = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.

ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

15

16

18

dB

Drain Efficiency

29

31

—

%

Output Peak-to-Average Ratio @ 0.01% Probability on CCDF

PAR

5.7

6.1

—

dB

Adjacent Channel Power Ratio

ACPR

—

-37

-35

dBc

Input Return Loss

IRL

—

-15

-9

dB

Video Bandwidth

(Tone Spacing from 100 kHz to VBW)

ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both

sidebands)

VBW

—

25

—

MHz

—

0.4

—

dB

Deviation from Linear Phase in 60 MHz Bandwidth

Φ

—

1.95

—

°

Delay

—

1.7

—

ns

ΔΦ

—

18

—

°

Gain Variation over Temperature

ΔG

—

0.015

—

dB/°C

Output Power Variation over Temperature

ΔP1dB

—

0.01

—

dBm/°C

schematic.

2. Part internally matched both on input and output.