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BFQ67T Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFQ67T Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  2000 Mar 06 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage MRC042 0 5 10 15 20 0 5 10 15 20 25 30 35 MSG Gmax gain (dB) IC (mA) GUM Fig.6 Gain as a function of collector current. VCE = 8 V; f = 1 GHz; Tamb =25 °C. handbook, halfpage 0 10 20 30 40 50 10−2 10−1 110 f (GHz) MRC040 MSG GUM Gmax gain (dB) Fig.7 Gain as a function of frequency. IC = 5 mA; VCE = 8 V; Tamb =25 °C. handbook, halfpage MRC041 0 10 20 30 40 50 10−2 10−1 110 f (GHz) MSG GUM Gmax gain (dB) Fig.8 Gain as a function of frequency. IC = 15 mA; VCE = 8 V; Tamb =25 °C. handbook, halfpage MRC043 0 10 20 30 40 50 10−2 10−1 110 f (GHz) MSG GUM Gmax gain (dB) Fig.9 Gain as a function of frequency. IC = 30 mA; VCE = 8 V; Tamb =25 °C. |
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