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BFR540 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFR540 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 16 page  1999 Aug 23 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation up to Ts =70 °C; note 1 − 500 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s from junction to soldering point see note 1 260 K/W |
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