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DG2518DQ-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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DG2518DQ-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74333 S-61774-Rev. A, 11-Sep-06 Vishay Siliconix DG2517/DG2518 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/°C above 70 °C. d. Derate 14.9 mW/°C above 70 °C. Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference to GND V+ - 0.3 to + 6 V IN, COM, NC, NOa - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) ± 50 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature (D Suffix) - 65 to 150 °C Power Dissipation (Packages)b MSOP-10c 320 mW DFN-10d 1191 SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 V e Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 2.7 V, VCOM = 1.5 V INO/NC = 10 mA Room Full 3.2 4.5 5.0 Ω rON Flatness rON Flatness V+ = 2.7 V, VCOM = 1.5, 2 V INO/NC = 10 mA Room Full 1.0 1.4 16 rON Match Between Channels Δr ON V+ = 2.7 V, VCOM = 1.5 V INO/NC = 10 mA Room Full 0.1 0.3 0.4 Switch Off Leakage Currentf INO(off), INC(off) V+ = 3.6 V, VNO, VNC = 0.3 V/ 3 V VCOM = 3 V/0.3 V Room Full - 1 - 10 1 10 nA ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Currentf ICOM(on) V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full - 1 - 10 1 10 Digital Control Input High Voltaged VINH Full 1.4 V Input Low Voltage VINL Full 0.5 Input Capacitance Cin Full 4 pF Input Current IINL or IINH Full 1 1 µA Dynamic Characteristics Turn-On Time tON V+ = 2.7 V, VNO or VNC = 1.5 V RL = 300 Ω, CL = 35 pF Room Full 15 30 50 ns Turn-Off Time tOFF Room Full 10 25 35 Break-Before-Make Time td VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF Full 1 Charge Injectiond QINJ CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω Room 1 pC - 3 dB Bandwidth BW 0 dBm, CL = 5 pF, RL = 50 Ω Room 157 MHz Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF f = 1 MHz Room - 67 dB f = 10 MHz Room - 47 Crosstalkd XTALK RL = 50 Ω, CL = 5 pF f = 1 MHz Room - 67 f = 10 MHz Room - 47 NO, NC Off Capacitance d CNO(off) VIN = 0 or V+, f = 1 MHz Room 8 pF CNC(off) Room 8 Channel-On Capacitanced CNO(on) Room 35 CNC(on) Room 35 Power Supply Power Supply Current I+ VIN = 0 or V+ Full 0.01 1.0 µA |
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