HY29DS163TT-12I datasheet(10/48 Pages) HYNIX

Part #	HY29DS163TT-12I

Description	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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10 / 48 page

10

HY29DS162/HY29DS163

r1.3/Apr 01

Table 5. HY29DS16x Normal Bus Operations 1

Notes:

1. L = V

IL, H = VIH, X = Don’t Care (L or H), DOUT = Data Out, DIN = Data In.

See DC Characteristics for voltage levels.

2. Address is A[19:0, -1] in Byte Mode and A[19:0] in Word Mode.

3. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).

4. If WP#/ACC = V

IL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the protection state of the two

outermost boot sectors depends on whether they were last protected or unprotected using the method described in

“Sector/Sector Block Protection and Unprotection”. If WP#/ACC = V

HH, all sectors will be unprotected.

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Table 6. HY29DS16x Bus Operations Requiring High Voltage 1, 2

Notes:

1. L = V

IL, H = VIH, X = Don’t Care (L OR H), VID = 10V nominal.

See DC Characteristics for voltage levels.

2. Address bits not specified are Don’t Care.

3. See text and Appendix for additional information.

4. SA = Sector Address, SGA = Sector Group Address. See Tables 1, 2, 7, and 8.

5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).

6. Normal read, write and output disable operations are used in this mode. See Table 5.

7. If WP#/ACC = V

IL, the two outermost boot sectors remain protected.

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