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BFT93 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFT93 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  November 1992 3 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−15 V VCEO collector-emitter voltage open base −−12 V VEBO emitter-base voltage open collector −−2V IC DC collector current −−35 mA ICM peak collector current f > 1 MHz −−50 mA Ptot total power dissipation up to Ts =95 °C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s thermal resistance from junction to soldering point up to Ts =70 °C; (note 1) 260 K/W |
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