Specifications and information are subject to change without notice.

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 6 June 2005

AH116 / ECP052G

Product Features

SOIC-8 SMT Pkg.

Applications

Repeaters

Product Description

The AH116 / ECP052 is a high dynamic range driver

amplifier in a low-cost surface mount package.

The

InGaP/GaAs HBT is able to achieve high performance for

various narrow-band tuned application circuits with up to

+43 dBm OIP3 and +28 dBm of compressed 1-dB power

and is housed in a lead-free/green/RoHS-compliant SOIC-8

package. All devices are 100% RF and DC tested.

The product is targeted for use as driver amplifiers for

wireless infrastructure where high linearity and medium

power is required. The internal active bias allows the

AH116 / ECP052 to maintain high linearity over

temperature and operate directly off a +5 V supply. This

combination makes the device an excellent fit for

transceiver line cards and power amplifiers in current and

next generation multi-carrier 3G base stations.

Functional Diagram

Function

Pin No.

Vref

1

Input / Base

3

Output / Collector

6, 7

Vbias

8

GND

Backside

N/C or GND

2, 4, 5

Specifications

Parameters

Units Min

Typ

Max

Frequency Range

MHz

900

Gain

dB

15

17.5

Input R.L.

dB

18

Output R.L.

dB

7

Output P1dB

dBm

+27

+28.7

dBm

+42

+43

IS-95A Channel Power

@ -45 dBc ACPR, 900 MHz

dBm

+23

Noise Figure

dB

7

mA

200

250

300

Device Voltage

V

+5

Test conditions unless otherwise noted.

1. T = 25ºC, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions. It is

expected that the current can increase up to 300mA at P1dB.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-65 to +150

°C

RF Input Power (continuous)

+22 dBm

Device Voltage

+8 V

Device Current

400 mA

Device Power

2 W

Junction Temperature

+250

°C

Operation of this device above any of these parameters may cause permanent damage.

Parameters

Units

Typical

Frequency

MHz

900

Gain

dB

17.5

S11

dB

-18

S22

dB

-7

Output P1dB

dBm

+28.7

dBm

+43

IS-95A Channel Power

@ -45 dBc ACPR,

dBm

+23

Noise Figure

dB

7

Supply Bias

+5 V @ 250 mA

Ordering Information

Part No.

Description

AH116-S8*

½ Watt, High Linearity InGaP HBT Amplifier

(lead-tin SOIC-8 Pkg)

ECP052G*

½ Watt, High Linearity InGaP HBT Amplifier

(lead-tin SOIC-8 Pkg)

AH116-S8G

½ Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant SOIC-8 Pkg)

AH116-S8PCB900

900 MHz Evaluation Board

* This package is being phased out in favor of the green package type which is backwards compatible for

existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.

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