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WEDPNF8M722V-1010BM Datasheet(PDF) 6 Page - White Electronic Designs Corporation |
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WEDPNF8M722V-1010BM Datasheet(HTML) 6 Page - White Electronic Designs Corporation |
6 / 43 page 6 6 6 6 6 White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 White Electronic Designs WEDPNF8M722V-XBX DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 3) (VCC = +3.3V ±0.3V; TA = -55°C TO +125°C) Parameter/Condition Parameter/Condition Parameter/Condition Parameter/Condition Parameter/Condition Symbol Symbol Symbol Symbol Symbol Units Units Units Units Units Min Min Min Min Min Max Max Max Max Max Supply Voltage VCC 3 3.6 V Input High Voltage: Logic 1; All inputs (4) VIH 0.7 x Vcc VCC + 0.3 V Input Low Voltage: Logic 0; All inputs (4) VIL -0.3 0.8 V SDRAM SDRAM SDRAM SDRAM SDRAM Input Leakage Current: Any input 0V - VIN - VCC II -5 5 µA (All other pins not under test = 0V) SDRAM Input Leakage Address Current (All other pins not under test = 0V) II -25 25 µA SDRAM Output Leakage Current: I/Os are disabled; 0V - VOUT - VCC IOZ -5 5 µA SDRAM Output High Voltage (IOUT = -4mA) VOH 2.4 – V SDRAM Output Low Voltage (IOUT = 4mA) VOL – 0.4 V Flash Flash Flash Flash Flash Flash Input Leakage Current (VCC = 3.6, VIN = GND or VCC) ILI 10 µA Flash Output Leakage Current (VCC = 3.6, VIN = GND or VCC) ILOx8 10 µA Flash Output High Voltage (IOH = -2.0 mA, VCC = 3.0) VOH1 0.85 X VCC V Flash Output Low Voltage (IOL = 5.8 mA, VCC = 3.0) VOL 0.45 V Flash Low VCC Lock-Out Voltage (5) VLKO 2.3 2.5 V NOTES: 1. All voltages referenced to VSS. 2. This parameter is not tested but guaranteed by design. f = 1 MHz, TA = 25°C. 3. An initial pause of 100ms is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VCC must be powered up simultaneously.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. 4. VIH overshoot: VIH (MAX) = VCC + 2V for a pulse width ≤ 3ns, and the pulse width cannot be greater than one third of the cycle rate. VIL undershoot: VIL (MIN) = -2V for a pulse width ≤ 3ns. 5. Guaranteed by design, but not tested. ABSOLUTE MAXIMUM RATINGS P PP PParameter arameter arameter arameter arameter Unit Unit Unit Unit Unit Supply Voltage Range (VCC) -0.5 to +4.0 V Signal Voltage Range -0.5 to Vcc +0.5 V Operating Temperature TA (Mil) -55 to +125 °C Operating Temperature TA (Ind) -40 to +85 °C Storage Temperature, Plastic -65 to +150 °C Flash Endurance (write/erase cycles) 1,000,000 min. cycles NOTE: NOTE: NOTE: NOTE: NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. SDRAM CAPACITANCE (NOTE 2) P PP PParameter arameter arameter arameter arameter Symbol Symbol Symbol Symbol Symbol Max Max Max Max Max Unit Unit Unit Unit Unit Input Capacitance: CLK CI1 8pF SDRAM Addresses, BA0-1 Input Capacitance CA 32 pF InputCapacitance:Allotherinput-onlypins CI2 8pF Input/Output Capacitance: I/Os CIO 12 pF Flash Address Capacitance FA 15 pF Flash Data Capacitance FD 10 pF FOE, FWE, RST 20 pF FLASH DATA RETENTION Parameter Parameter Parameter Parameter Parameter Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions Min Min Min Min Min Unit Unit Unit Unit Unit Minimum Pattern Data 150°C 10 Years Retention Time 125°C 20 Years |
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