Specifications and information are subject to change without notice.

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 9 June 2005

AH312 / ECP200G

2 Watt, High Linearity InGaP HBT Amplifier

Product Information

Product Features

SOIC-8 SMT Pkg.

Applications

Product Description

The AH312 / ECP200 is a high dynamic range driver

amplifier in a low-cost surface mount package.

The

InGaP/GaAs HBT is able to achieve high performance for

various narrowband-tuned application circuits with up to

+49 dBm OIP3 and +33 dBm of compressed 1dB power. It

is housed in a lead-free/green/RoHS-compliant SOIC-8

package. All devices are 100% RF and DC tested.

The AH312 / ECP200 is targeted for use as a driver

amplifier in wireless infrastructure where high linearity and

medium power is required. An internal active bias allows

the AH312 to maintain high linearity over temperature and

operate directly off a single +5V supply. This combination

makes the device an excellent candidate for transceiver line

cards in current and next generation multi-carrier 3G base

stations.

Functional Diagram

Function

Pin No.

Vref

1

Input

3

Output

6, 7

Vbias

8

GND

Backside Paddle

N/C or GND

2, 4, 5

Parameter

Units Min

Typ

Max

Operational Bandwidth

MHz

400

2300

Test Frequency

MHz

2140

Gain

dB

9

10

Input R.L.

dB

20

Output R.L.

dB

6.8

Output P1dB

dBm

+32

+33.2

dBm

+47

+48

IS-95A Channel Power

@ -45 dBc ACPR, 1960 MHz

dBm

+27.5

W-CDMA Channel Power

@ -45 dBc ACLR, 2140 MHz

dBm

+25.3

Noise Figure

dB

7.7

mA

700

800

900

Device Voltage, Vcc

V

+5

1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into

pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin

1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull

22mA of current when used with a series bias resistor of R1=15

Ω. (ie. total device current

typically will be 822 mA.)

Parameter

Units

Typical

Frequency

MHz

900

1960

2140

S21 – Gain

dB

18

11

10

S11 – Input R.L.

dB

-18

-19

-20

S22 – Output R.L.

dB

-11

-6.8

-6.8

Output P1dB

dBm

+33

+33.4

+33.2

Output IP3

dBm

+49

+51

+48

IS-95A Channel Power

@ -45 dBc ACPR

dBm

+27

+27.5

W-CDMA Channel Power

@ -45 dBc ACLR

dBm

+25.3

Noise Figure

dB

8.0

7.3

7.7

+5 V @ 800 mA

4. Typical parameters reflect performance in a tuned application circuit at +25

° C.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-65 to +150

°C

RF Input Power (continuous)

+28 dBm

Device Voltage

+8 V

Device Current

1400 mA

Device Power

8 W

Junction Temperature

+250

°C

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No.

Description

AH312-S8*

2 Watt, High Linearity InGaP HBT Amplifier

(lead-tin SOIC-8 Pkg)

ECP200G*

2 Watt, High Linearity InGaP HBT Amplifier

(lead-tin SOIC-8 Pkg)

AH312-S8G

2 Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant SOIC-8 Pkg)

AH312-S8PCB900

900 MHz Evaluation Board

AH312-S8PCB1960

1960 MHz Evaluation Board

AH312-S8PCB2140

2140 MHz Evaluation Board

* This package is being phased out in favor of the green package type which is backwards compatible for

existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.

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