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PMEM4020ND Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMEM4020ND Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page 2003 Nov 10 5 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PMEM4020ND ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT NPN transistor ICBO collector-base cut-off current VCB = 40 V; IE =0 −− 100 nA VCB = 40 V; IE = 0; Tamb = 150 °C −− 50 µA ICEO collector-emitter cut-off current VCE = 30 V; IB =0 −− 100 nA IEBO emitter-base cut-off current VEB =5V; IC =0 −− 100 nA hFE current gain (DC) VCE =5V; IC =1mA 300 −− VCE =5V; IC = 500 mA 300 − 900 VCE =5V; IC =1A 200 −− VCE =5V; IC = 2 A; note 1 75 −− VCEsat collector-emitter saturation voltage IC = 100 mA; IB =1mA −− 75 mV IC = 500 mA; IB =50mA −− 100 mV IC = 1 A; IB = 100 mA −− 190 mV IC = 2 A; IB = 200 mA −− 400 mV VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA −− 1.2 V RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA; note 1 − 150 190 m Ω VBEon base-emitter turn-on voltage VCE =5V; IC =1A −− 1.1 V fT transition frequency IC = 50 mA; VCE =10V; f = 100 MHz 150 −− MHz Cc collector capacitance VCB = 10 V; IE =0;ie =0; f = 1 MHz −− 10 pF Schottky barrier diode VF continuous forward voltage see Fig.2; note 1 IF =10mA − 240 270 mV IF = 100 mA − 300 350 mV IF = 1000 mA − 480 550 mV IR reverse current see Fig.3; note 1 VR =5V − 510 µA VR =8V − 720 µA VR =15V − 10 50 µA Cd diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 − 19 25 pF |
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