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HAT2173H-EL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2173H-EL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  HAT2173H Rev.2.00 Sep 26, 2005 page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 4.0 — 6.0 V VDS = 10 V, ID = 20 mA RDS(on) — 12 15 m Ω ID = 12.5 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 13 17.5 m Ω ID = 12.5 A, VGS = 8 V Note4 Forward transfer admittance |yfs| 27 45 — S ID = 12.5 A, VDS = 10 V Note4 Input capacitance Ciss — 4350 — pF Output capacitance Coss — 520 — pF Reverse transfer capacitance Crss — 150 — pF VDS = 10 V, VGS = 0, f = 1 MHz Gate resistance Rg — 0.5 — Ω Total gate charge Qg — 61 — nC Gate to source charge Qgs — 23 — nC Gate to drain charge Qgd — 14.5 — nC VDD = 50 V,VGS = 10 V, ID = 25 A Turn-on delay time td(on) — 20 — ns Rise time tr — 15 — ns Turn-off delay time td(off) — 37 — ns Fall time tf — 5.7 — ns VGS = 10 V, ID = 12.5 A, VDD ≅ 30 V, RL = 2.4 Ω, Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.82 1.07 V IF = 25 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 55 — ns IF = 25 A, VGS = 0, diF/ dt = 100 A/ µs Notes: 4. Pulse test |
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