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STTH810D Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH810D Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 11 page STTH810 Characteristics 5/11 Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) Figure 13. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, ecu = 35 µm) t (ns) fr 200 250 300 350 400 450 500 550 600 0 100 200 300 400 500 I F = IF(AV) V FR = 1.5 x VF max. T j=125°C dI /dt(A/µs) F C(pF) 1 10 100 1 10 100 1000 F=1MHz V osc=30mVRMS T j=25°C V (V) R R (°C/W) th(j-a) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 D²PAK S (cm²) CU |
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