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BGD802 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BGD802 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  1999 Mar 26 5 Philips Semiconductors Product specification CATV amplifier modules BGD802; BGD802MI Table 3 Bandwidth 40 to 750 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75 Ω Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp +fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp =Vo; fq = 747.25 MHz; Vq =Vo −6 dB; fr = 749.25 MHz; Vr =Vo −6 dB; measured at fp +fq − fr = 738.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 50 MHz 18 18.5 19 dB f = 750 MHz 18.5 19.4 − dB SL slope cable equivalent f = 40 to 750 MHz 0.2 − 2dB FL flatness of frequency response f = 40 to 750 MHz −−±0.5 dB S11 input return losses f = 40 to 80 MHz 20 35 − dB f = 80 to 160 MHz 18.5 31 − dB f = 160 to 320 MHz 17 27 − dB f = 320 to 640 MHz 15.5 22 − dB f = 640 to 750 MHz 14 20 − dB S22 output return losses f = 40 to 80 MHz 20 29.5 − dB f = 80 to 160 MHz 18.5 29 − dB f = 160 to 320 MHz 17 25.5 − dB f = 320 to 640 MHz 15.5 23 − dB f = 640 to 750 MHz 14 22 − dB S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz −−60.5 −58 dB Xmod cross modulation 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz −−62.5 −60 dB CSO composite second order distortion 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz −−66 −60 dB d2 second order distortion note 1 −−−72 dB Vo output voltage dim = −60 dB; note 2 64 −− dBmV F noise figure see Table 1 −−− dB Itot total current consumption (DC) note 3 − 395 410 mA |
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Similar Description - BGD802 |
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