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BGE788 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGE788 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 9397 750 14433 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 30 March 2005 2 of 7 Philips Semiconductors BGE788 750 MHz, 34 dB gain push-pull amplifier 2. Pinning information 3. Ordering information 4. Limiting values Table 2: Pinning Pin Description Simplified outline Symbol 1 input 2 common 3 common 5+VB 7 common 8 common 9 output 9 13 57 23 78 5 9 1 sym095 Table 3: Ordering information Type number Package Name Description Version BGE788 - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VB supply voltage - 25 V Vi RF input voltage - 55 dBmV Tstg storage temperature −40 +100 °C Tmb mounting base temperature −20 +100 °C |
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Similar Description - BGE788 |
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