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PDTA143TE Datasheet(PDF) 2 Page - NXP Semiconductors |
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PDTA143TE Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2004 Aug 04 2 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 k Ω, R2 = open PDTA143T series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage −−50 V IO output current (DC) −−100 mA R1 bias resistor 4.7 − k Ω R2 open −−− PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA143TE SOT416 SC-75 39 PDTC143TE PDTA143TEF SOT490 SC-89 10 PDTC143TEF PDTA143TK SOT346 SC-59 45 PDTC143TK PDTA143TM SOT883 SC-101 E6 PDTC143TM PDTA143TS SOT54 (TO-92) SC-43 TA143T PDTC143TS PDTA143TT SOT23 − *42(1) PDTC143TT PDTA143TU SOT323 SC-70 *45(1) PDTC143TU |
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