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M366S1654CTS-L7C Datasheet(PDF) 7 Page - Samsung semiconductor

Part # M366S1654CTS-L7C
Description  16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M366S1654CTS-L7C Datasheet(HTML) 7 Page - Samsung semiconductor

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M366S1654CTS
PC133/PC100 Unbuffered DIMM
Rev. 0.1 Sept. 2001
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
- 7C
- 7A
- 1H
- 1L
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle
time
CAS latency=3
tCC
7.5
1000
7.5
1000
10
1000
10
1000
ns
1
CAS latency=2
7.5
10
10
12
CLK to valid
output delay
CAS latency=3
tSAC
5.4
5.4
6
6
ns
1,2
CAS latency=2
5.4
6
6
7
Output data
hold time
CAS latency=3
tOH
3
3
3
3
ns
2
CAS latency=2
3
3
3
3
CLK high pulse width
tCH
2.5
2.5
3
3
ns
3
CLK low pulse width
tCL
2.5
2.5
3
3
ns
3
Input setup time
tSS
1.5
1.5
2
2
ns
3
Input hold time
tSH
0.8
0.8
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
tSHZ
5.4
5.4
6
6
ns
CAS latency=2
5.4
6
6
7
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.


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